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HomeMicroscopyElectron MicroscopyFIB HITACHI NX2000 Focused Ion And Electron Beam System And Triple Beam System
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HITACHI NX9000 Real-Time 3D Analytical FIB-SEM

HITACHI NX2000 Focused Ion And Electron Beam System And Triple Beam System

  • Indispensable tool for characterization and analysis of the latest technologies and high performance nano-scale materials
  • Ever-increasing demand for ultrathin TEM lamellas without artifacts during FIB processing require the best in ion and electron optics technologies
  • Its unique sample orientation control (optional) and triple beam (optional) technologies, supports high throughput, and high quality TEM sample preparation for cutting edge applications
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  • Description
Description

Features:

  • High contrast, real-time SEM end point detection allows ultra thin TEM sample preparation of sub 20 nm devices
  • Micro sampling (optional) and high precision positioning mechanism (optional) enable sample orientation control for Anti-Curtaining Effects (ACE function) and uniformly-thick lamellas
  • Triple Beam system (optional) Triple beam configuration for Ga FIB-induced damage reduction

Application

High-quality lamella preparation with in-situ Ar ion milling

Specimen: GaN/InGaN

Final milling: 1 kV Ar

Observation: HD-2700 Aberration -corrected STEM (Accelerating voltage : 200 kV)

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Quasi-S Pte Ltd
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35 Marsiling Industrial Estate Road 3 #04-03, Singapore 739257.

T (65) 6383 4386
F (65) 6383 3071
E contact@quasi-s.com.sg

Quasi-S Technology Sdn Bhd
(Bangi Branch)

Block Stroma B3-1, UKM-MTDC Smart Technology Centre 43600 Bangi, Selangor, Malaysia

T (603) 8920 2570
F (603) 8920 2506
E inquiry@quasi-s.com.my

Quasi-S Sdn Bhd
(Penang Branch)

15-G-26 Bayan Point Medan Kampung Relau 11900 Penang, Malaysia

T (604) 645 6973
F (60) 4645 6573
E inquiry@quasi-s.com.my

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