Features:
- High contrast, real-time SEM end point detection allows ultra thin TEM sample preparation of sub 20 nm devices
- Micro sampling (optional) and high precision positioning mechanism (optional) enable sample orientation control for Anti-Curtaining Effects (ACE function) and uniformly-thick lamellas
- Triple Beam system (optional) Triple beam configuration for Ga FIB-induced damage reduction
Application

High-quality lamella preparation with in-situ Ar ion milling
Specimen: GaN/InGaN
Final milling: 1 kV Ar
Observation: HD-2700 Aberration -corrected STEM (Accelerating voltage : 200 kV)