HITACHI NX2000 Focused Ion &Electron Beam System & Triple Beam System

HITACHI NX2000 Focused Ion And Electron Beam System And Triple Beam System

Indispensable tool for characterization and analysis of the latest technologies and high performance nano-scale materials
Ever-increasing demand for ultrathin TEM lamellas without artifacts during FIB processing require the best in ion and electron optics technologies
Its unique sample orientation control (optional) and triple beam (optional) technologies, supports high throughput, and high quality TEM sample preparation for cutting edge applications

High contrast, real-time SEM end point detection allows ultra thin TEM sample preparation of sub 20 nm devices
Micro sampling (optional) and high precision positioning mechanism (optional) enable sample orientation control for Anti-Curtaining Effects (ACE function) and uniformly-thick lamellas
Triple Beam system (optional) Triple beam configuration for Ga FIB-induced damage reduction

High-quality lamella preparation with in-situ Ar ion milling

Specimen: GaN/InGaN

Final milling: 1 kV Ar

Observation: HD-2700 Aberration -corrected STEM (Accelerating voltage : 200 kV)

HITACHI NX2000 Focused Ion And Electron Beam System And Triple Beam System