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HomeMicroscopyElectron MicroscopyFIB HITACHI MI4050 Focused Ion Beam System
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HITACHI NX2000 Focused Ion And Electron Beam System And Triple Beam System

HITACHI MI4050 Focused Ion Beam System

  • Equipped with new optics and provides the world-leading SIM imaging resolution and high-definition TEM sample preparation with improved imaging resolution at low kV
  • Accommodates a variety of applications such as cross-section observation, circuit modification, vector scan processing, nano-micro patterning, nano molding, and 3D nano fabrication using deposition function
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  • Description
Description

Features:

  • Greatly reduce processing time using the Big Probe Current (maximum probe current 90 nA)
  • Ultra low damaged TEM sample preparation by low-kV processing (0.5kV or higher) and improved SE image resolution at low kV (less than 1kV optional)
  • High resolution SIM imaging (SE image resolution 4nm at 30kV)
  • High precision 5-axis motorized mechanical eucentric stage
  • Ease of use and various processing modes
  • SIM image 3D reconstruction analysis
  • Circuit modification using multi-gas injection system (MGS II), optional
  • Variety of coordinate linkage function (optional)

Application

Specimen: Laminated ceramic capacitor
Cross-sectional analysis using multiple signals

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Quasi-S Pte Ltd
(HQ)

35 Marsiling Industrial Estate Road 3 #04-03, Singapore 739257.

T (65) 6383 4386
F (65) 6383 3071
E contact@quasi-s.com.sg

Quasi-S Technology Sdn Bhd
(Bangi Branch)

Block Stroma B3-1, UKM-MTDC Smart Technology Centre 43600 Bangi, Selangor, Malaysia

T (603) 8210 1765
F (603) 8920 2506
E inquirybangi@quasi-s.com.my

Quasi-S Sdn Bhd
(Penang Branch)

15-G-26 Bayan Point Medan Kampung Relau 11900 Penang, Malaysia

T (604) 645 6973
F (60) 4645 6573
E inquiry@quasi-s.com.my

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