HITACHI MI4050 Focused Ion Beam System

Equipped with new optics and provides the world-leading SIM imaging resolution and high-definition TEM sample preparation with improved imaging resolution at low kV
Accommodates a variety of applications such as cross-section observation, circuit modification, vector scan processing, nano-micro patterning, nano molding, and 3D nano fabrication using deposition function

Greatly reduce processing time using the Big Probe Current (maximum probe current 90 nA)
Ultra low damaged TEM sample preparation by low-kV processing (0.5kV or higher) and improved SE image resolution at low kV (less than 1kV optional)
High resolution SIM imaging (SE image resolution 4nm at 30kV)
High precision 5-axis motorized mechanical eucentric stage
Ease of use and various processing modes
SIM image 3D reconstruction analysis
Circuit modification using multi-gas injection system (MGS II), optional
Variety of coordinate linkage function (optional)

Specimen: Laminated ceramic capacitor
Cross-sectional analysis using multiple signals