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HITACHI HF-5000 FE TEM

HITACHI HF-3300 FE TEM

  • 100-300 kV TEM/STEM/SEM powered by Hitachi’s state-of-the-art cold field emission technology for high-brightness and high-energy resolution
  • Unique electron optical designs include spatially resolved EELS (optional) and double biprism (optional) electron holography
  • Simultaneous secondary electron imaging and STEM imaging reveal surface and bulk structures at the same time
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  • Description
Description

Features:

  • High-brightness Cold Field Emission (Cold FE) electron source
    – Cold field emission electron source benefits nanoscale analysis with its high brightness and high-energy resolution. Its inherent high coherency greatly contributes to ultra-high resolution imaging and electron holography (optional)
  • 300 kV accelerating voltage
    – A 300 kV accelerating voltage allows atomic-resolution imaging for thick specimens. Metals and ceramics with high atomic numbers are less electron transparent and often need to be observed at a 300 kV accelerating voltage
  • Unique analytical capabilities
    – The newly introduced spatially resolved EELS (optional) and the in-situ SEM/TEM imaging (optional) nanobeam electron diffraction provide sophisticated and unique analytical capabilities
  • Holder linkage with the FIB system (optional)
    – The Hitachi-FIB-compatible specimen holder (optional) requires no tweezer handling of TEM grids between FIB fabrication and TEM observation and ensures high-throughput TEM analysis. Hitachi’s unique specimen rotation holder (optional) enables real-time multidirectional structural analysis together with an STEM unit (optional)
  • User-friendly operation
    – Windows-based TEM/STEM (optional) computer control, a motor-driven movable aperture, and a 5-axis motorized stage make the high-end TEM more accessible. It only takes 10 minutes to be high-voltage-ready and 1 minute for specimen exchange, providing high sample throughput for TEM analysis

Application

Graphene high resolution TEM image
Accelerating voltage: 60 kV

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Quasi-S Pte Ltd
(HQ)

35 Marsiling Industrial Estate Road 3 #04-03, Singapore 739257.

T (65) 6383 4386
F (65) 6383 3071
E contact@quasi-s.com.sg

Quasi-S Technology Sdn Bhd
(Bangi Branch)

Block Stroma B3-1, UKM-MTDC Smart Technology Centre 43600 Bangi, Selangor, Malaysia

T (603) 8920 2570
F (603) 8920 2506
E inquirybangi@quasi-s.com.my

Quasi-S Sdn Bhd
(Penang Branch)

15-G-26 Bayan Point Medan Kampung Relau 11900 Penang, Malaysia

T (604) 645 6973
F (60) 4645 6573
E inquiry@quasi-s.com.my

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