Features:
- High-brightness Cold Field Emission (Cold FE) electron source
– Cold field emission electron source benefits nanoscale analysis with its high brightness and high-energy resolution. Its inherent high coherency greatly contributes to ultra-high resolution imaging and electron holography (optional) - 300 kV accelerating voltage
– A 300 kV accelerating voltage allows atomic-resolution imaging for thick specimens. Metals and ceramics with high atomic numbers are less electron transparent and often need to be observed at a 300 kV accelerating voltage - Unique analytical capabilities
– The newly introduced spatially resolved EELS (optional) and the in-situ SEM/TEM imaging (optional) nanobeam electron diffraction provide sophisticated and unique analytical capabilities - Holder linkage with the FIB system (optional)
– The Hitachi-FIB-compatible specimen holder (optional) requires no tweezer handling of TEM grids between FIB fabrication and TEM observation and ensures high-throughput TEM analysis. Hitachi’s unique specimen rotation holder (optional) enables real-time multidirectional structural analysis together with an STEM unit (optional) - User-friendly operation
– Windows-based TEM/STEM (optional) computer control, a motor-driven movable aperture, and a 5-axis motorized stage make the high-end TEM more accessible. It only takes 10 minutes to be high-voltage-ready and 1 minute for specimen exchange, providing high sample throughput for TEM analysis
Application
Graphene high resolution TEM image
Accelerating voltage: 60 kV
