RAMANdrive is the specialized Raman microscope for wafer analysis equipped with our dedicated 300 mm stage. RAMANdrive gives you an ultra-fast, highest resolution analysis of the whole wafer with unique stability and accuracy. The Nanophoton Stage Navigation System accepts data from your inspection system and use it to move the wafer to all indicated positions for a detailed analysis. The dedicated stage moves the wafer safely and with high accuracy to all areas of interest.
RAMANdrive uses high-quality dark-field microscopy to easily localize particles, even smaller than 100 nm. Analyzing the particle is done by very high-performance Raman spectroscopy and provides a detailed material composition. High quality confocal optics gives RAMANdrive high performance 3D Raman imaging capability. Stress distribution and polytype distribution can be clearly visualized in 3D with sub-micron resolution.
* Accurate and stabele 300 mm wafer stage
Large wafers of up to 300 mm can be placed on the stage. Vacuum lines are connected to small holes in channels, which allows a applied vacuum to flatten and hold the wafer on the stage. Our extended wafer stage makes it possible for the laser to access the entire exposed wafer surface. Even a tall sample also can be analyzed by placing it in the deep channel part of the stage.
* Upload your areas of interest with the Stage Navigation System
The Stage Navigation System is an essential part of the RAMANdrive software, designed to save time and improve the efficiency. Simply upload your data from your regular inspection tool and RAMANdrive identifies your areas of interest and moves the wafer automatically to the requested positions for a detailed analysis. This technology works even with other samples if requested.
* High Performance Raman Imaging
* Visualize stress distribution by 3D Raman Imaging
Our confocal optics allows depth profiling of transparent samples such as SiC and GaN. Here we demonstrate the cross-sectional Raman imaging of stress distribution in a SiC wafer. It easily shows that stress is reduced by the polishing process.
Photoluminescence (PL) imaging is widely used to observe the distribution of defects, impurities and GaN itself. 325 nm UV laser option is used to surpass the band gap and detect PL spectra of InGaN dots with different sizes and composition. A UV laser is also useful to measure Raman spectra at the outermost surface of samples because of its short penetration depth.